PBSS303PD Todos los transistores

 

PBSS303PD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS303PD
   Código: AH
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.5 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 110 MHz
   Capacitancia de salida (Cc): 58 pF
   Ganancia de corriente contínua (hfe): 180
   Paquete / Cubierta: SOT457 SC74
     - Selección de transistores por parámetros

 

PBSS303PD Datasheet (PDF)

 ..1. Size:191K  nxp
 pbss303pd.pdf pdf_icon

PBSS303PD

PBSS303PD60 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

 6.1. Size:177K  nxp
 pbss303px.pdf pdf_icon

PBSS303PD

PBSS303PX30 V, 5.1 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NX.1.2 Features Low collector-emitter saturation voltage VCEsa

 6.2. Size:152K  nxp
 pbss303pz.pdf pdf_icon

PBSS303PD

PBSS303PZ30 V, 5.3 A PNP low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS303NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 7.1. Size:175K  nxp
 pbss303nd.pdf pdf_icon

PBSS303PD

PBSS303ND60 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 14 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS303PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

MOSTRAR MÁS

Otros transistores... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SD2499 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: CSB621A | CSC2003 | 2SC4959 | P609 | DDTC115GE | PBLS4003D | 16318

 

 
Back to Top

 


 
.