PBSS303PZ Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS303PZ

Código: S303PZ

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 110 pF

Ganancia de corriente contínua (hFE): 250

Encapsulados: SOT223

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PBSS303PZ datasheet

 ..1. Size:152K  nxp
 pbss303pz.pdf pdf_icon

PBSS303PZ

PBSS303PZ 30 V, 5.3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303NZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.1. Size:191K  nxp
 pbss303pd.pdf pdf_icon

PBSS303PZ

PBSS303PD 60 V, 3 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303ND. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cur

 6.2. Size:177K  nxp
 pbss303px.pdf pdf_icon

PBSS303PZ

PBSS303PX 30 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement PBSS303NX. 1.2 Features Low collector-emitter saturation voltage VCEsa

 7.1. Size:175K  nxp
 pbss303nd.pdf pdf_icon

PBSS303PZ

PBSS303ND 60 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 14 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS303PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

MOSTRAR MÁS

Otros transistores... PBSS302PD, PBSS302PX, PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, BC549, PBSS304ND, PBSS304NX, PBSS304NZ, PBSS304PD, PBSS304PX, PBSS304PZ, PBSS305ND, PBSS305NX