PBSS304ND
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS304ND
Código: AF
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.5
W
Tensión colector-base (Vcb): 80
V
Tensión colector-emisor (Vce): 80
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 3
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140
MHz
Capacitancia de salida (Cc): 18
pF
Ganancia de corriente contínua (hfe): 240
Paquete / Cubierta:
SOT457
SC74
Búsqueda de reemplazo de transistor bipolar PBSS304ND
PBSS304ND
Datasheet (PDF)
..1. Size:158K philips
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
..2. Size:158K nxp
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
6.1. Size:199K nxp
pbss304nx.pdf
PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa
6.2. Size:119K nxp
pbss304nz.pdf
PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
7.1. Size:129K philips
pbss304pd.pdf
PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
7.2. Size:122K nxp
pbss304pd.pdf
PBSS304PD80 V, 3 A PNP low VCEsat (BISS) transistorRev. 02 24 March 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304ND.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current
7.3. Size:173K nxp
pbss304pz.pdf
PBSS304PZ60 V, 4.5 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu
7.4. Size:198K nxp
pbss304px.pdf
PBSS304PX60 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 02 8 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS304NX.1.2 Features Low collector-emitter saturation voltage VCEsat
7.5. Size:496K slkor
pbss304.pdf
PBSS304SOT89 Features E BVCEO > 60V IC = 5A High Continuous Current RSAT = 30m for a Low Equivalent On-Resistance C C Low Saturation Voltage VCE(SAT)
7.6. Size:1225K slkor
pbss304px.pdf
PBSS304PX60V PNP LOW SATURATION MEDIUM POWER TRANSISTORSOT89 Features BVCEO > -60V E IC = -4.3A high continuous current RSAT = 32m for a low equivalent On-Resistance C Low saturation voltage VCE(sat)
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.