PBSS304NX
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS304NX
Código: *5E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.1
W
Tensión colector-base (Vcb): 60
V
Tensión colector-emisor (Vce): 60
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 4.7
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 130
MHz
Capacitancia de salida (Cc): 48
pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar PBSS304NX
PBSS304NX
Datasheet (PDF)
..1. Size:199K nxp
pbss304nx.pdf
PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa
6.1. Size:158K philips
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
6.2. Size:119K nxp
pbss304nz.pdf
PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c
6.3. Size:158K nxp
pbss304nd.pdf
PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr
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