PBSS304NX Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS304NX

Código: *5E

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.1 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 130 MHz

Capacitancia de salida (Cc): 48 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT89

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PBSS304NX datasheet

 ..1. Size:199K  nxp
 pbss304nx.pdf pdf_icon

PBSS304NX

PBSS304NX 60 V, 4.7 A NPN low VCEsat (BISS) transistor Rev. 02 20 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PX. 1.2 Features Low collector-emitter saturation voltage VCEsa

 6.1. Size:158K  philips
 pbss304nd.pdf pdf_icon

PBSS304NX

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 6.2. Size:119K  nxp
 pbss304nz.pdf pdf_icon

PBSS304NX

PBSS304NZ 60 V, 5.2 A NPN low VCEsat (BISS) transistor Rev. 01 18 September 2006 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PZ. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.3. Size:158K  nxp
 pbss304nd.pdf pdf_icon

PBSS304NX

PBSS304ND 80 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 17 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS304PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

MOSTRAR MÁS

Otros transistores... PBSS302PZ, PBSS303ND, PBSS303NX, PBSS303NZ, PBSS303PD, PBSS303PX, PBSS303PZ, PBSS304ND, 2SA1015, PBSS304NZ, PBSS304PD, PBSS304PX, PBSS304PZ, PBSS305ND, PBSS305NX, PBSS305NZ, PBSS305PD