All Transistors. PBSS304NX Datasheet

 

PBSS304NX Datasheet and Replacement


   Type Designator: PBSS304NX
   SMD Transistor Code: *5E
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 2.1 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 4.7 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 130 MHz
   Collector Capacitance (Cc): 48 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT89
 

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PBSS304NX Datasheet (PDF)

 ..1. Size:199K  nxp
 pbss304nx.pdf pdf_icon

PBSS304NX

PBSS304NX60 V, 4.7 A NPN low VCEsat (BISS) transistorRev. 02 20 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PX.1.2 Features Low collector-emitter saturation voltage VCEsa

 6.1. Size:158K  philips
 pbss304nd.pdf pdf_icon

PBSS304NX

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

 6.2. Size:119K  nxp
 pbss304nz.pdf pdf_icon

PBSS304NX

PBSS304NZ60 V, 5.2 A NPN low VCEsat (BISS) transistorRev. 01 18 September 2006 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PZ.1.2 Features Low collector-emitter saturation voltage VCEsat High collector c

 6.3. Size:158K  nxp
 pbss304nd.pdf pdf_icon

PBSS304NX

PBSS304ND80 V, 3 A NPN low VCEsat (BISS) transistorRev. 02 17 December 2007 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS304PD.1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

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Datasheet: PBSS302PZ , PBSS303ND , PBSS303NX , PBSS303NZ , PBSS303PD , PBSS303PX , PBSS303PZ , PBSS304ND , 2SC2240 , PBSS304NZ , PBSS304PD , PBSS304PX , PBSS304PZ , PBSS305ND , PBSS305NX , PBSS305NZ , PBSS305PD .

History: GI2921 | 2SD1319 | GI2924 | BCZ12 | FMMT3053 | 2SD710 | FTB1184

Keywords - PBSS304NX transistor datasheet

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