PBSS305NZ Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS305NZ  📄📄 

Código: S305NZ

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 5.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 110 MHz

Capacitancia de salida (Cc): 30 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT223

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PBSS305NZ datasheet

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PBSS305ND 100 V, 3 A NPN low VCEsat (BISS) transistor Rev. 02 7 December 2007 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS305PD. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector curr

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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