2N5620 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5620
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 120 V
Tensión colector-emisor (Vce): 100 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 60 MHz
Ganancia de corriente contínua (hFE): 30
Encapsulados: TO3
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2N5620 datasheet
2n5620.pdf
2N5620 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5614 2n5616 2n5618 2n5620.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3
2n5629 2n5630 2n6029 2n6030.pdf
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2n5623.pdf
2N5623 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
Otros transistores... 2N5612A , 2N5613 , 2N5614 , 2N5615 , 2N5616 , 2N5617 , 2N5618 , 2N5619 , 2N3906 , 2N5621 , 2N5622 , 2N5623 , 2N5624 , 2N5625 , 2N5626 , 2N5627 , 2N5628 .
History: BC289 | 2SB992 | SUR489J | SUR491J | ED1701K
History: BC289 | 2SB992 | SUR489J | SUR491J | ED1701K
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