2N5620
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5620
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50
W
Tensión colector-base (Vcb): 120
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 5
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar 2N5620
2N5620
Datasheet (PDF)
..1. Size:11K semelab
2n5620.pdf 
2N5620Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
..2. Size:118K inchange semiconductor
2n5614 2n5616 2n5618 2n5620.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3
9.2. Size:11K semelab
2n5623.pdf
2N5623Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.3. Size:11K semelab
2n5622.pdf
2N5622Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.4. Size:123K jmnic
2n5622 2n5624 2n5626 2n5628.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Abso
9.5. Size:118K jmnic
2n5629 2n5630.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbolAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIO
9.6. Size:103K jmnic
2n5621 2n5623 2n5625 2n5627.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Abso
9.7. Size:118K inchange semiconductor
2n5622 2n5624 2n5626 2n5628.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbso
9.8. Size:118K inchange semiconductor
2n5629 2n5630.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=) SYMBOL PARAMETE
9.9. Size:118K inchange semiconductor
2n5621 2n5623 2n5625 2n5627.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbs
Otros transistores... 2N5612A
, 2N5613
, 2N5614
, 2N5615
, 2N5616
, 2N5617
, 2N5618
, 2N5619
, 2SD718
, 2N5621
, 2N5622
, 2N5623
, 2N5624
, 2N5625
, 2N5626
, 2N5627
, 2N5628
.
