2N5620 Specs and Replacement
Type Designator: 2N5620
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2N5620 datasheet
..1. Size:11K semelab
2n5620.pdf 
2N5620 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 100V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 5A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
..2. Size:118K inchange semiconductor
2n5614 2n5616 2n5618 2n5620.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5614 2N5616 2N5618 2N5620 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3... See More ⇒
9.2. Size:11K semelab
2n5623.pdf
2N5623 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.3. Size:11K semelab
2n5622.pdf
2N5622 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a... See More ⇒
9.4. Size:123K jmnic
2n5622 2n5624 2n5626 2n5628.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Abso... See More ⇒
9.5. Size:118K jmnic
2n5629 2n5630.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIO... See More ⇒
9.6. Size:103K jmnic
2n5621 2n5623 2n5625 2n5627.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Abso... See More ⇒
9.7. Size:118K inchange semiconductor
2n5622 2n5624 2n5626 2n5628.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5622 2N5624 2N5626 2N5628 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abso... See More ⇒
9.8. Size:118K inchange semiconductor
2n5629 2n5630.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5629 2N5630 DESCRIPTION With TO-3 package Complement to type 2N6029 2N6030 APPLICATIONS For high voltage and high power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta= ) SYMBOL PARAMETE... See More ⇒
9.9. Size:118K inchange semiconductor
2n5621 2n5623 2n5625 2n5627.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5621 2N5623 2N5625 2N5627 DESCRIPTION With TO-3 package Excellent safe operating area Low collector saturation voltage APPLICATIONS For audio and general-purpose applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abs... See More ⇒
Detailed specifications: 2N5612A, 2N5613, 2N5614, 2N5615, 2N5616, 2N5617, 2N5618, 2N5619, 2N3906, 2N5621, 2N5622, 2N5623, 2N5624, 2N5625, 2N5626, 2N5627, 2N5628
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