PBSS3540M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3540M40 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Aug 12NXP Semiconductors Product data sheet40 V, 0.5 A PBSS3540MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS3540MB40 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 7 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2540MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

PBSS3540E40 V, 500 mA PNP low VCEsat (BISS) transistorRev. 01 3 May 2005 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT416 (SC-75) SMDplastic package.NPN complement: PBSS2540E.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PBSS3515FPNP transistorProduct specification 2000 Oct 25Philips Semiconductors Product specificationPNP transistor PBSS3515FFEATURES PINNING Low VCEsatPIN DESCRIPTION High current capabilities.1 base2 emitterAPPLICATIONS3 collector Heavy duty battery powered equipment (Automotive,Telecom and Audio Video) such as

DISCRETE SEMICONDUCTORS DATA SHEETM3D883BOTTOM VIEWPBSS3515M15 V, 0.5 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Jul 22NXP Semiconductors Product data sheet15 V, 0.5 A PBSS3515MPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capabili

PBSS3515E15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 02 27 April 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra smallSOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS2515E.1.2 Features Low collector-emitter saturation voltage VCEsat High collecto

PBSS3515MB15 V, 0.5 A PNP low VCEsat (BISS) transistorRev. 1 6 March 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB.1.2 Features and benefits Leadless ultra small SMD plastic High ef

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS3515VS15 V low VCEsat PNP doubletransistorProduct specification 2001 Nov 07Supersedes data of 2001 Sep 27Philips Semiconductors Product specification15 V low VCEsat PNP double transistorPBSS3515VSFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 x 1.2 mm ultra thin p

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain