PBSS4021NT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4021NT

Código: *BH

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 20 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 4.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 165 MHz

Capacitancia de salida (Cc): 36 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT23

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PBSS4021NT datasheet

 ..1. Size:176K  philips
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PBSS4021NT

PBSS4021NT 20 V, 4.3 A NPN low VCEsat (BISS) transistor Rev. 01 31 January 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PT. 1.2 Features Very low collector-emitter saturation voltage VCEsat High col

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PBSS4021NT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:196K  philips
 pbss4021nx.pdf pdf_icon

PBSS4021NT

PBSS4021NX 20 V, 7 A NPN low VCEsat (BISS) transistor Rev. 01 1 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PX. 1.2 Features and benefits Very low collector-emitter saturation

 5.2. Size:190K  philips
 pbss4021nz.pdf pdf_icon

PBSS4021NT

PBSS4021NZ 20 V, 8 A NPN low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBSS4021PZ. 1.2 Features and benefits Very low collector-emitter saturation voltage VCE

MOSTRAR MÁS

Otros transistores... PBSS306NZ, PBSS306PX, PBSS306PZ, PBSS3515E, PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, BD333, PBSS4021PT, PBSS4032ND, PBSS4032NT, PBSS4032PD, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T