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PBSS4021NT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4021NT
   Código: *BH
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 20 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 4.3 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 165 MHz
   Capacitancia de salida (Cc): 36 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT23
 

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PBSS4021NT Datasheet (PDF)

 ..1. Size:176K  philips
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PBSS4021NT

PBSS4021NT20 V, 4.3 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col

 ..2. Size:293K  nxp
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PBSS4021NT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:196K  philips
pbss4021nx.pdf pdf_icon

PBSS4021NT

PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation

 5.2. Size:190K  philips
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PBSS4021NT

PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE

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History: ME4003 | BC847AWR | 13005F | NS1864A | BD167 | 2SD1489 | BFJ45

 

 
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