Биполярный транзистор PBSS4021NT - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4021NT
Маркировка: *BH
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 4.3 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 165 MHz
Ёмкость коллекторного перехода (Cc): 36 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT23
Аналоги (замена) для PBSS4021NT
PBSS4021NT Datasheet (PDF)
pbss4021nt.pdf
PBSS4021NT20 V, 4.3 A NPN low VCEsat (BISS) transistorRev. 01 31 January 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PT.1.2 Features Very low collector-emitter saturation voltage VCEsat High col
pbss4021nt.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4021nx.pdf
PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation
pbss4021nz.pdf
PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE
pbss4021nx.pdf
PBSS4021NX20 V, 7 A NPN low VCEsat (BISS) transistor9 October 2012 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerand flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package. PNPcomplement: PBSS4021PX.1.2 Features and benefits Very low collector-emitter saturation voltage
pbss4021nz.pdf
PBSS4021NZ20 V, 8 A NPN low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBSS4021PZ.1.2 Features and benefits Very low collector-emitter saturation voltage VCE
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 13009 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
