PBSS4032PD Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4032PD

Código: ZG

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 1 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2.7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 104 MHz

Capacitancia de salida (Cc): 59 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT457 SC74

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PBSS4032PD datasheet

 ..1. Size:182K  philips
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PBSS4032PD

PBSS4032PD 30 V, 2.7 A PNP low VCEsat (BISS) transistor Rev. 01 27 January 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032ND. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 ..2. Size:299K  nxp
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PBSS4032PD

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:172K  philips
pbss4032pt.pdf pdf_icon

PBSS4032PD

PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NT. 1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

 5.2. Size:190K  philips
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PBSS4032PD

PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor Rev. 01 31 March 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4032NZ. 1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

Otros transistores... PBSS3515M, PBSS3515VS, PBSS3540E, PBSS3540M, PBSS4021NT, PBSS4021PT, PBSS4032ND, PBSS4032NT, 2SC5200, PBSS4032PT, PBSS4041NT, PBSS4041PT, PBSS4120T, PBSS4130T, PBSS4140DPN, PBSS4140T, PBSS4140U