PBSS4032PD Todos los transistores

 

PBSS4032PD . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4032PD
   Código: ZG
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2.7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 104 MHz
   Capacitancia de salida (Cc): 59 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT457 SC74

 Búsqueda de reemplazo de transistor bipolar PBSS4032PD

 

PBSS4032PD Datasheet (PDF)

 ..1. Size:182K  philips
pbss4032pd.pdf

PBSS4032PD PBSS4032PD

PBSS4032PD30 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032ND.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

 ..2. Size:299K  nxp
pbss4032pd.pdf

PBSS4032PD PBSS4032PD

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.1. Size:172K  philips
pbss4032pt.pdf

PBSS4032PD PBSS4032PD

PBSS4032PT30 V, 2.4 A PNP low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

 5.2. Size:190K  philips
pbss4032pz.pdf

PBSS4032PD PBSS4032PD

PBSS4032PZ30 V, 4.4 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 5.3. Size:188K  philips
pbss4032px.pdf

PBSS4032PD PBSS4032PD

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

 5.4. Size:289K  nxp
pbss4032pt.pdf

PBSS4032PD PBSS4032PD

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 5.5. Size:191K  nxp
pbss4032pz.pdf

PBSS4032PD PBSS4032PD

PBSS4032PZ30 V, 4.4 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

 5.6. Size:188K  nxp
pbss4032px.pdf

PBSS4032PD PBSS4032PD

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

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