PBSS4032PD - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор PBSS4032PD - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: PBSS4032PD
   Маркировка: ZG
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 1 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 2.7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 104 MHz
   Ёмкость коллекторного перехода (Cc): 59 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT457 SC74

Аналоги (замена) для PBSS4032PD

PBSS4032PD Datasheet (PDF)

..1. Size:182K philips
pbss4032pd.pdf

PBSS4032PD30 V, 2.7 A PNP low VCEsat (BISS) transistorRev. 01 27 January 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032ND.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized switc

..2. Size:299K nxp
pbss4032pd.pdf

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

5.1. Size:172K philips
pbss4032pt.pdf

PBSS4032PT30 V, 2.4 A PNP low VCEsat (BISS) transistorRev. 01 18 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NT.1.2 Features Low collector-emitter saturation voltage VCEsat Optimized sw

5.2. Size:190K philips
pbss4032pz.pdf

PBSS4032PZ30 V, 4.4 A PNP low VCEsat (BISS) transistorRev. 01 31 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NZ.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat

5.3. Size:188K philips
pbss4032px.pdf

PBSS4032PX30 V, 4.2 A PNP low VCEsat (BISS) transistorRev. 01 1 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power and flat lead SOT89 (SC-62) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4032NX.1.2 Features and benefits Very low collector-emitter saturati

5.4. Size:289K nxp
pbss4032pt.pdf