PBSS4140V Todos los transistores

 

PBSS4140V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS4140V
   Código: 22
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1.2 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT666
 

 Búsqueda de reemplazo de PBSS4140V

   - Selección ⓘ de transistores por parámetros

 

PBSS4140V Datasheet (PDF)

 ..1. Size:57K  nxp
pbss4140v.pdf pdf_icon

PBSS4140V

DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS4140V40 V low VCEsat NPN transistorProduct specification 2002 Jun 20Supersedes data of 2001 Nov 05Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thinVCEO

 6.1. Size:258K  philips
pbss4140t.pdf pdf_icon

PBSS4140V

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4140T40 V, 1A NPN low VCEsat (BISS) transistorProduct data sheet 2005 Feb 24Supersedes data of 2005 Feb 14NXP Semiconductors Product data sheet40 V, 1A PBSS4140TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

 6.2. Size:259K  philips
pbss4140u.pdf pdf_icon

PBSS4140V

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102PBSS4140U40 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO

 6.3. Size:342K  philips
pbss4140dpn.pdf pdf_icon

PBSS4140V

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SD109 | MRF1029 | 2N5368 | UN6115R | 2SC1669 | TN3567 | CD2328Y

 

 
Back to Top

 


 
.