Биполярный транзистор PBSS4140V - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PBSS4140V
Маркировка: 22
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 1.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT666
Аналоги (замена) для PBSS4140V
PBSS4140V Datasheet (PDF)
pbss4140v.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D744PBSS4140V40 V low VCEsat NPN transistorProduct specification 2002 Jun 20Supersedes data of 2001 Nov 05Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm x 1.2 mm x 0.55 mm ultra thinVCEO
pbss4140t.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPBSS4140T40 V, 1A NPN low VCEsat (BISS) transistorProduct data sheet 2005 Feb 24Supersedes data of 2005 Feb 14NXP Semiconductors Product data sheet40 V, 1A PBSS4140TNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO
pbss4140u.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D102PBSS4140U40 V low VCEsat NPN transistorProduct data sheet 2001 Jul 13Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilities.VCEO
pbss4140dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt
pbss4140t.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4140u.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4140dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4140DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2001 Dec 13NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4140DPNFEATURES QUICK REFERENCE DATA 600 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltageVCEO collector-emitt
pbss4140s.pdf
PBSS4140S(BR3DG4140SK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High PC, low VCE(sat), high current switching. / Applications
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050