PBSS4240V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4240V 📄📄
Código: 42
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 150 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hFE): 300
Encapsulados: SOT666
📄📄 Copiar
Búsqueda de reemplazo de PBSS4240V
- Selecciónⓘ de transistores por parámetros
PBSS4240V datasheet
pbss4240v.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VCEO collector-emitter voltage
pbss4240dpn.pdf
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT
pbss4240t.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO
pbss4240y.pdf
DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr
Otros transistores... PBSS4160DS, PBSS4160T, PBSS4160U, PBSS4160V, PBSS4220V, PBSS4230T, PBSS4240DPN, PBSS4240T, BD140, PBSS4240Y, PBSS4250X, PBSS4320T, PBSS4320X, PBSS4330PA, PBSS4330X, PBSS4350D, PBSS4350SPN
History: PDTC143ZT | 2SC2164 | BFU520W | 2SC218 | PDTC143ZM
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc2312 | bu406 datasheet | irfb7437 | tip32a | p75nf75 mosfet equivalent | irfpe50 | tip50 | transistor bc547 datasheet








