PBSS4240V Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4240V  📄📄 

Código: 42

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 10 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT666

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PBSS4240V datasheet

 ..1. Size:86K  nxp
pbss4240v.pdf pdf_icon

PBSS4240V

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4240V 40 V low VCEsat NPN transistor Product data sheet 2003 Jan 30 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240V FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat SYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICM VCEO collector-emitter voltage

 6.1. Size:435K  philips
pbss4240dpn.pdf pdf_icon

PBSS4240V

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsat MAX. High collector current capability IC and ICM SYMBOL PARAMETER UNIT

 6.2. Size:246K  philips
pbss4240t.pdf pdf_icon

PBSS4240V

DISCRETE SEMICONDUCTORS DATA SHEET PBSS4240T 40 V; 2 A NPN low VCEsat (BISS) transistor Product data sheet 2004 Jan 09 Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet 40 V; 2 A NPN low VCEsat PBSS4240T (BISS) transistor FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO

 6.3. Size:55K  nxp
pbss4240y.pdf pdf_icon

PBSS4240V

DISCRETE SEMICONDUCTORS DATA SHEET age MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitter voltage 40 V Impr

Otros transistores... PBSS4160DS, PBSS4160T, PBSS4160U, PBSS4160V, PBSS4220V, PBSS4230T, PBSS4240DPN, PBSS4240T, BD140, PBSS4240Y, PBSS4250X, PBSS4320T, PBSS4320X, PBSS4330PA, PBSS4330X, PBSS4350D, PBSS4350SPN