PBSS4240V . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4240V
Código: 42
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150 MHz
Capacitancia de salida (Cc): 10 pF
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: SOT666
Búsqueda de reemplazo de PBSS4240V
PBSS4240V Datasheet (PDF)
pbss4240v.pdf

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS4240V40 V low VCEsat NPN transistorProduct data sheet 2003 Jan 30NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4240VFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability IC and ICMVCEO collector-emitter voltage
pbss4240dpn.pdf

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D302PBSS4240DPN40 V low VCEsat NPN/PNP transistorProduct data sheet 2003 Feb 20NXP Semiconductors Product data sheet40 V low VCEsat NPN/PNP transistorPBSS4240DPNFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatMAX. High collector current capability IC and ICMSYMBOL PARAMETER UNIT
pbss4240t.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPBSS4240T40 V; 2 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Jan 09Supersedes data of 2001 Jul 13 NXP Semiconductors Product data sheet40 V; 2 A NPN low VCEsat PBSS4240T(BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO
pbss4240y.pdf

DISCRETE SEMICONDUCTORSDATA SHEETageMBD128PBSS4240Y40 V low VCEsat NPN transistorProduct specification 2001 Jul 13Philips Semiconductors Product specification40 V low VCEsat NPN transistorPBSS4240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitter voltage 40 V Impr
Otros transistores... PBSS4160DS , PBSS4160T , PBSS4160U , PBSS4160V , PBSS4220V , PBSS4230T , PBSS4240DPN , PBSS4240T , 2SD718 , PBSS4240Y , PBSS4250X , PBSS4320T , PBSS4320X , PBSS4330PA , PBSS4330X , PBSS4350D , PBSS4350SPN .
History: MG75H2DL1 | RCP705 | MJE15035G | IMH4AFRA
History: MG75H2DL1 | RCP705 | MJE15035G | IMH4AFRA



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