PBSS4540X Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS4540X  📄📄 

Código: *1B

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.55 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 70 MHz

Capacitancia de salida (Cc): 75 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT89

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PBSS4540X datasheet

 ..1. Size:199K  philips
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PBSS4540X

 ..2. Size:237K  nxp
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PBSS4540X

PBSS4540X 40 V, 5 A NPN low VCEsat (BISS) transistor 15 April 2020 Product data sheet 1. General description NPN low VCEsat transistor in a medium power SOT89 (SC-62) package. PNP complement PBSS5540X. 2. Features and benefits High hFE and low VCEsat at high current operation High collector current capability IC maximum 4 A High efficiency leading to less heat generation.

 6.1. Size:49K  philips
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PBSS4540X

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z FEATURES PINNING High current (max. 10 A) PIN DESCRIPTION Low voltage (max. 40 V) 1 base Low VCEsat. 2 collector 3 emitter APPLICATIONS 4 coll

 6.2. Size:146K  philips
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PBSS4540X

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D087 PBSS4540Z 40 V low VCEsat NPN transistor Product data sheet 2001 Nov 14 Supersedes data of 2001 Jul 24 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4540Z FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX UNIT High current capabilities VCEO emitter-colle

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