PBSS4580PA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS4580PA 📄📄
Código: AD
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 80 V
Tensión colector-emisor (Vce): 80 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 5.6 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 95 MHz
Capacitancia de salida (Cc): 25 pF
Ganancia de corriente contínua (hFE): 270
Encapsulados: SOT1061
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PBSS4580PA datasheet
pbss4580pa.pdf
PBSS4580PA 80 V, 5.6 A NPN low VCEsat (BISS) transistor Rev. 01 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5580PA. 1.2 Features and benefi
pbss4580pa.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbss4540z 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PBSS4540Z NPN medium power transistor Preliminary specification 1999 Aug 04 Philips Semiconductors Preliminary specification NPN medium power transistor PBSS4540Z FEATURES PINNING High current (max. 10 A) PIN DESCRIPTION Low voltage (max. 40 V) 1 base Low VCEsat. 2 collector 3 emitter APPLICATIONS 4 coll
Otros transistores... PBSS4350Z, PBSS4420D, PBSS4440D, PBSS4480X, PBSS4520X, PBSS4540X, PBSS4540Z, PBSS4560PA, 2SC1815, PBSS4612PA, PBSS4620PA, PBSS4630PA, PBSS5120T, PBSS5130T, PBSS5140T, PBSS5140U, PBSS5140V
History: 2SC1876
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