Справочник транзисторов. PBSS4580PA

 

Биполярный транзистор PBSS4580PA - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: PBSS4580PA
   Маркировка: AD
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 5.6 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 95 MHz
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 270
   Корпус транзистора: SOT1061

 Аналоги (замена) для PBSS4580PA

 

 

PBSS4580PA Datasheet (PDF)

 ..1. Size:168K  philips
pbss4580pa.pdf

PBSS4580PA PBSS4580PA

PBSS4580PA80 V, 5.6 A NPN low VCEsat (BISS) transistorRev. 01 15 April 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5580PA.1.2 Features and benefi

 ..2. Size:285K  nxp
pbss4580pa.pdf

PBSS4580PA PBSS4580PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.1. Size:49K  philips
pbss4540z 1.pdf

PBSS4580PA PBSS4580PA

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PBSS4540ZNPN medium power transistorPreliminary specification 1999 Aug 04Philips Semiconductors Preliminary specificationNPN medium power transistor PBSS4540ZFEATURES PINNING High current (max. 10 A)PIN DESCRIPTION Low voltage (max. 40 V)1 base Low VCEsat.2 collector3 emitterAPPLICATIONS4 coll

 8.2. Size:199K  philips
pbss4540x.pdf

PBSS4580PA PBSS4580PA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet40 V, 5 A PBSS4540XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

 8.3. Size:199K  philips
pbss4520x.pdf

PBSS4580PA PBSS4580PA

DISCRETE SEMICONDUCTORS DATA SHEETbook, halfpageM3D109PBSS4520X20 V, 5 A NPN low VCEsat (BISS) transistorProduct data sheet 2004 Nov 08Supersedes data of 2004 Jun 11NXP Semiconductors Product data sheet20 V, 5 A PBSS4520XNPN low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA High hFE and low VCEsat at high current operationSYMBOL PARAMETER MAX. UNIT

 8.4. Size:146K  philips
pbss4540z.pdf

PBSS4580PA PBSS4580PA

DISCRETE SEMICONDUCTORS DATA SHEETfpageM3D087PBSS4540Z40 V low VCEsat NPN transistorProduct data sheet 2001 Nov 14Supersedes data of 2001 Jul 24NXP Semiconductors Product data sheet40 V low VCEsat NPN transistorPBSS4540ZFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX UNIT High current capabilitiesVCEO emitter-colle

 8.5. Size:168K  philips
pbss4560pa.pdf

PBSS4580PA PBSS4580PA

PBSS4560PA60 V, 6 A NPN low VCEsat (BISS) transistorRev. 1 19 May 2010 Product data sheet1. Product profile1.1 General descriptionNPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.PNP complement: PBSS5560PA.1.2 Features and benefits

 8.6. Size:237K  nxp
pbss4540x.pdf

PBSS4580PA PBSS4580PA

PBSS4540X40 V, 5 A NPN low VCEsat (BISS) transistor15 April 2020 Product data sheet1. General descriptionNPN low VCEsat transistor in a medium power SOT89 (SC-62) package.PNP complement: PBSS5540X.2. Features and benefits High hFE and low VCEsat at high current operation High collector current capability: IC maximum 4 A High efficiency leading to less heat generation.

 8.7. Size:438K  nxp
pbss4520x.pdf

PBSS4580PA PBSS4580PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.8. Size:354K  nxp
pbss4540z.pdf

PBSS4580PA PBSS4580PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.9. Size:285K  nxp
pbss4560pa.pdf

PBSS4580PA PBSS4580PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

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