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PBSS5140T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS5140T
   Código: *2H
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT23
 

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PBSS5140T Datasheet (PDF)

 ..1. Size:99K  philips
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PBSS5140T

PBSS5140T40 V, 1 A PNP low VCEsat BISS transistorRev. 04 29 July 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

 ..2. Size:55K  philips
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PBSS5140T

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PBSS5140TPNP BISS transistorProduct specification 2000 Nov 16Philips Semiconductors Product specificationPNP BISS transistor PBSS5140TFEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low collector-emitter saturation voltage ensures1 basereduced power consumption.2 emitter3 collectorAPPLICATIONS

 ..3. Size:216K  nxp
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PBSS5140T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:249K  philips
pbss5140v.pdf pdf_icon

PBSS5140T

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

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