PBSS5140U Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS5140U  📄📄 

Código: 51t

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 150 MHz

Capacitancia de salida (Cc): 12 pF

Ganancia de corriente contínua (hFE): 300

Encapsulados: SOT323

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PBSS5140U datasheet

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PBSS5140U

DISCRETE SEMICONDUCTORS DATA SHEET age M3D102 PBSS5140U 40 V low VCEsat PNP transistor Product data sheet 2001 Jul 20 Supersedes data of 2001 Mar 27 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140U FEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage SYMBOL PARAMETER MAX. UNIT High current capability VCEO collector-emitte

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PBSS5140U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:249K  philips
pbss5140v.pdf pdf_icon

PBSS5140U

DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS5140V 40 V low VCEsat PNP transistor Product data sheet 2002 Mar 20 Supersedes data of 2001 Oct 19 NXP Semiconductors Product data sheet 40 V low VCEsat PNP transistor PBSS5140V FEATURES QUICK REFERENCE DATA 300 mW total power dissipation SYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

 6.2. Size:99K  philips
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PBSS5140U

PBSS5140T 40 V, 1 A PNP low VCEsat BISS transistor Rev. 04 29 July 2008 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS4140T. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

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