All Transistors. PBSS5140U Datasheet

 

PBSS5140U Datasheet and Replacement


   Type Designator: PBSS5140U
   SMD Transistor Code: 51t
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 300
   Noise Figure, dB: -
   Package: SOT323
 

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PBSS5140U Datasheet (PDF)

 ..1. Size:270K  philips
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PBSS5140U

DISCRETE SEMICONDUCTORS DATA SHEETageM3D102PBSS5140U40 V low VCEsat PNP transistorProduct data sheet 2001 Jul 20Supersedes data of 2001 Mar 27NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140UFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emitte

 ..2. Size:477K  nxp
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PBSS5140U

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:249K  philips
pbss5140v.pdf pdf_icon

PBSS5140U

DISCRETE SEMICONDUCTORS DATA SHEETM3D744PBSS5140V40 V low VCEsat PNP transistorProduct data sheet 2002 Mar 20Supersedes data of 2001 Oct 19NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5140VFEATURES QUICK REFERENCE DATA 300 mW total power dissipationSYMBOL PARAMETER MAX. UNIT Very small 1.6 mm 1.2 mm 0.55 mm ultra thin VCEO coll

 6.2. Size:99K  philips
pbss5140t.pdf pdf_icon

PBSS5140U

PBSS5140T40 V, 1 A PNP low VCEsat BISS transistorRev. 04 29 July 2008 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)small Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4140T.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N5666SMD05 | BF491K | KD238A | ASZ20 | KSE44H-4 | KC847BT | NA31L

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