PBSS5230T Todos los transistores

 

PBSS5230T . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBSS5230T
   Código: 3K*
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 30 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 28 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar PBSS5230T

 

PBSS5230T Datasheet (PDF)

 ..1. Size:50K  nxp
pbss5230t.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORSDATA SHEETgeM3D088PBSS5230T30 V, 2 APNP low VCEsat (BISS) transistorProduct specification 2003 Dec 18Philips Semiconductors Product specification30 V, 2 APBSS5230TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability: IC

 6.1. Size:237K  nxp
pbss5230qa.pdf

PBSS5230T PBSS5230T

PBSS5230QA30 V, 2 A PNP low VCEsat (BISS) transistor23 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4230QA.2. Features and benefits Very low collector-emitter

 6.2. Size:266K  nxp
pbss5230pap.pdf

PBSS5230T PBSS5230T

PBSS5230PAP30 V, 2 A PNP/PNP low VCEsat (BISS) transistor11 January 2013 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4230PANP. NPN/NPN complement: PBSS4230PAN.2. Features and benefits Very low collecto

 8.1. Size:287K  philips
pbss5240t.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORS DATA SHEETPBSS5240T40 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Jan 15Supersedes data of 2001 Oct 31NXP Semiconductors Product data sheet40 V, 2 A PBSS5240TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO c

 8.2. Size:257K  philips
pbss5220t.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORS DATA SHEETageM3D088PBSS5220T20 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2003 Dec 18NXP Semiconductors Product data sheet20 V, 2 A PBSS5220TPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltage VCEsatSYMBOL PARAMETER MAX. UNIT High collector current capability: IC and I

 8.3. Size:147K  philips
pbss5250x.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

 8.4. Size:197K  nxp
pbss5240x.pdf

PBSS5230T PBSS5230T

PBSS5240X40 V, 2 A PNP low VCEsat (BISS) transistor19 October 2012 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power andflat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:PBSS4240X.1.2 Features and benefits Low collector-emitter saturation voltage VCEsat H

 8.5. Size:503K  nxp
pbss5240t.pdf

PBSS5230T PBSS5230T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.6. Size:567K  nxp
pbss5240v.pdf

PBSS5230T PBSS5230T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.7. Size:162K  nxp
pbss5220v.pdf

PBSS5230T PBSS5230T

PBSS5220V20 V, 2 A PNP low VCEsat (BISS) transistorRev. 03 14 December 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface Mounted Device (SMD) plastic package.NPN complement: PBSS4220V.1.2 Features Low collector-emitter saturation voltage VCEsat High collector current capabilit

 8.8. Size:725K  nxp
pbss5255paps.pdf

PBSS5230T PBSS5230T

PBSS5255PAPS55V, 2A PNP/PNP low VCEsat (BISS) double transistor11 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.2. Features and benefits Very low collector-emitter sat

 8.9. Size:244K  nxp
pbss5260qa.pdf

PBSS5230T PBSS5230T

PBSS5260QA60 V, 1.7 A PNP low VCEsat (BISS) transistor28 August 2013 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visibleand solderable side pads.NPN complement: PBSS4260QA.2. Features and benefits Very low collector-emitte

 8.10. Size:725K  nxp
pbss5220paps.pdf

PBSS5230T PBSS5230T

PBSS5220PAPS20V, 2 A PNP/PNP low VCEsat (BISS) double transistor14 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4220PANS2. Features and benefits

 8.11. Size:43K  nxp
pbss5250t.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORSDATA SHEETgeM3D088PBSS5250T50 V, 2 APNP low VCEsat (BISS) transistorProduct specification 2003 Oct 09Philips Semiconductors Product specification50 V, 2 APBSS5250TPNP low VCEsat (BISS) transistorQUICK REFERENCE DATAFEATURESSYMBOL PARAMETER MAX. UNIT Low collector-emitter saturation voltage VCEsatVCEO collector-emitter voltage -50 V

 8.12. Size:224K  nxp
pbss5240z.pdf

PBSS5230T PBSS5230T

PBSS5240Z40 V, 2 A PNP low VCEsat (BISS) transistor15 October 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium powerSOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.NPN complement: PBSS4240Z2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capabi

 8.13. Size:62K  nxp
pbss5240y.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORS DATA SHEETfpageMBD128PBSS5240Y40 V low VCEsat PNP transistorProduct data sheet 2002 Feb 28Supersedes data of 2001 Oct 24NXP Semiconductors Product data sheet40 V low VCEsat PNP transistorPBSS5240YFEATURES QUICK REFERENCE DATA Low collector-emitter saturation voltageSYMBOL PARAMETER MAX. UNIT High current capabilityVCEO collector-emit

 8.14. Size:470K  nxp
pbss5220t.pdf

PBSS5230T PBSS5230T

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 8.15. Size:147K  nxp
pbss5250x.pdf

PBSS5230T PBSS5230T

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5250X50 V, 2 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 04Supersedes data of 2003 Jun 17NXP Semiconductors Product data sheet50 V, 2 A PBSS5250XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

 8.16. Size:242K  nxp
pbss5250th.pdf

PBSS5230T PBSS5230T

PBSS5250TH50 V, 2 A PNP low VCEsat (BISS) transistor9 August 2017 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package.2. Features and benefits Low collector-emitter saturation voltage VCEsat High collector current capability: IC and ICM High collec

 8.17. Size:735K  nxp
pbss5260paps.pdf

PBSS5230T PBSS5230T

PBSS5260PAPS60 V, 2 A PNP/PNP low VCEsat (BISS) double transistor15 December 2015 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) double transistor in a leadlessmedium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plasticpackage with visible and solderable side pads.NPN/NPN complement: PBSS4260PANS2. Features and benefits

 8.18. Size:246K  nxp
pbss5260pap.pdf

PBSS5230T PBSS5230T

PBSS5260PAP60 V, 2 A PNP/PNP low VCEsat (BISS) transistor12 December 2012 Product data sheet1. General descriptionPNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadlessmedium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.NPN/PNP complement: PBSS4260PANP. NPN/NPN complement: PBSS4260PAN.2. Features and benefits Very low collect

 8.19. Size:1566K  kexin
pbss5240v.pdf

PBSS5230T PBSS5230T

SMD Type TransistorsPNP TransistorsPBSS5240V (KBSS5240V) SOT523-6(SOT666) Features4 Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM53 High collector current gain (hFE) at high IC6 2 High efficiency leading to reduced heat generation1.collector2.collector Reduced printed-circuit board area requireme

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