PBSS5330PA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBSS5330PA
Código: AJ
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 100 MHz
Capacitancia de salida (Cc): 45 pF
Ganancia de corriente contínua (hfe): 200
Paquete / Cubierta: SOT1061
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PBSS5330PA Datasheet (PDF)
pbss5330pa.pdf

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.1.2 Features and benefits
pbss5330pa.pdf

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.NPN complement: PBSS4330PA.2. Features and benefits Low collector-emitter saturatio
pbss5330pas.pdf

PBSS5330PAS30 V, 3 A PNP low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PAS2. F
pbss5330x.pdf

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5330X30 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Nov 28NXP Semiconductors Product data sheet30 V, 3 A PBSS5330XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat
Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N5401 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2N212 | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U
History: 2N212 | 2SC765 | 2SB443A | 2N5862 | DTC123JEB | NKT108 | KRC663U



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