All Transistors. PBSS5330PA Datasheet

 

PBSS5330PA Datasheet, Equivalent, Cross Reference Search


   Type Designator: PBSS5330PA
   SMD Transistor Code: AJ
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.5 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 45 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT1061

 PBSS5330PA Transistor Equivalent Substitute - Cross-Reference Search

   

PBSS5330PA Datasheet (PDF)

 ..1. Size:158K  philips
pbss5330pa.pdf

PBSS5330PA
PBSS5330PA

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistorRev. 01 19 April 2010 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability.NPN complement: PBSS4330PA.1.2 Features and benefits

 ..2. Size:704K  nxp
pbss5330pa.pdf

PBSS5330PA
PBSS5330PA

PBSS5330PA30 V, 3 A PNP low VCEsat (BISS) transistor7 April 2015 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in anultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package withmedium power capability.NPN complement: PBSS4330PA.2. Features and benefits Low collector-emitter saturatio

 0.1. Size:248K  nxp
pbss5330pas.pdf

PBSS5330PA
PBSS5330PA

PBSS5330PAS30 V, 3 A PNP low VCEsat (BISS) transistor11 September 2014 Product data sheet1. General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultrathin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plasticpackage with medium power capability and visible and soldarable side pads.NPN complement: PBSS4330PAS2. F

 6.1. Size:189K  philips
pbss5330x.pdf

PBSS5330PA
PBSS5330PA

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PBSS5330X30 V, 3 A PNP low VCEsat (BISS) transistorProduct data sheet 2004 Nov 03Supersedes data of 2003 Nov 28NXP Semiconductors Product data sheet30 V, 3 A PBSS5330XPNP low VCEsat (BISS) transistorFEATURES QUICK REFERENCE DATA SOT89 (SC-62) packageSYMBOL PARAMETER MAX. UNIT Low collector-emitter sat

 6.2. Size:417K  nxp
pbss5330x.pdf

PBSS5330PA
PBSS5330PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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