PBSS8110D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS8110D  📄📄 

Código: A8

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 7.5 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT457 SC74

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PBSS8110D datasheet

 ..1. Size:150K  nxp
 pbss8110d.pdf pdf_icon

PBSS8110D

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3

 6.1. Size:135K  nxp
 pbss8110x.pdf pdf_icon

PBSS8110D

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili

 6.2. Size:123K  nxp
 pbss8110t.pdf pdf_icon

PBSS8110D

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag

 6.3. Size:163K  nxp
 pbss8110y.pdf pdf_icon

PBSS8110D

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati

MOSTRAR MÁS

Otros transistores... PBSS5520X, PBSS5540X, PBSS5540Z, PBSS5560PA, PBSS5580PA, PBSS5612PA, PBSS5620PA, PBSS5630PA, BC547B, PBSS8110T, PBSS8110X, PBSS8110Y, PBSS8110Z, PBSS8510PA, PBSS9110D, PBSS9110T, PBSS9110X