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PBSS8110D PDF Specs and Replacement


   Type Designator: PBSS8110D
   SMD Transistor Code: A8
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics


   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 150
   Noise Figure, dB: -
   Package: SOT457 SC74
 

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PBSS8110D PDF detailed specifications

 ..1. Size:150K  nxp
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PBSS8110D

PBSS8110D 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. 1.2 Features SOT457 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency, leading to less heat generation 1.3 ... See More ⇒

 6.1. Size:135K  nxp
pbss8110x.pdf pdf_icon

PBSS8110D

PBSS8110X 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 01 11 May 2005 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough in Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement PBSS9110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current capabili... See More ⇒

 6.2. Size:123K  nxp
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PBSS8110D

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS8110T 100 V, 1 A NPN low VCEsat (BISS) transistor Product specification 2003 Dec 22 Supersedes data of 2003 Jul 28 Philips Semiconductors Product specification 100 V, 1 A PBSS8110T NPN low VCEsat (BISS) transistor QUICK REFERENCE DATA FEATURES SYMBOL PARAMETER MAX. UNIT SOT23 package VCEO collector-emitter voltag... See More ⇒

 6.3. Size:163K  nxp
pbss8110y.pdf pdf_icon

PBSS8110D

PBSS8110Y 100 V, 1 A NPN low VCEsat (BISS) transistor Rev. 02 21 November 2009 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. 1.2 Features SOT363 package Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High efficiency reduces heat generation 1.3 Applicati... See More ⇒

Detailed specifications: PBSS5520X , PBSS5540X , PBSS5540Z , PBSS5560PA , PBSS5580PA , PBSS5612PA , PBSS5620PA , PBSS5630PA , BC547B , PBSS8110T , PBSS8110X , PBSS8110Y , PBSS8110Z , PBSS8510PA , PBSS9110D , PBSS9110T , PBSS9110X .

Keywords - PBSS8110D pdf specs

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