PBSS9110Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PBSS9110Z  📄📄 

Código: PB9110

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.65 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 17 pF

Ganancia de corriente contínua (hFE): 150

Encapsulados: SOT223

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PBSS9110Z datasheet

 ..1. Size:188K  nxp
 pbss9110z.pdf pdf_icon

PBSS9110Z

PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS8110Z. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

 6.1. Size:180K  philips
 pbss9110t.pdf pdf_icon

PBSS9110Z

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2004 May 13 Supersedes data of 2004 May 06 NXP Semiconductors Product data sheet 100 V, 1 A PBSS9110T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT23 package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio

 6.2. Size:184K  nxp
 pbss9110x.pdf pdf_icon

PBSS9110Z

PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca

 6.3. Size:166K  nxp
 pbss9110d.pdf pdf_icon

PBSS9110Z

PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS8110D. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu

MOSTRAR MÁS

Otros transistores... PBSS8110X, PBSS8110Y, PBSS8110Z, PBSS8510PA, PBSS9110D, PBSS9110T, PBSS9110X, PBSS9110Y, BD136, PBSS9410PA, PDTA113EE, PDTA113EM, PDTA113ET, PDTA113EU, PDTA113ZE, PDTA113ZM, PDTA113ZT