PBSS9110Z Datasheet. Specs and Replacement

Type Designator: PBSS9110Z  📄📄 

SMD Transistor Code: PB9110

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.65 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 17 pF

Forward Current Transfer Ratio (hFE), MIN: 150

Noise Figure, dB: -

Package: SOT223

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PBSS9110Z datasheet

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PBSS9110Z

PBSS9110Z 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS8110Z. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu... See More ⇒

 6.1. Size:180K  philips

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PBSS9110Z

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PBSS9110T 100 V, 1 A PNP low VCEsat (BISS) transistor Product data sheet 2004 May 13 Supersedes data of 2004 May 06 NXP Semiconductors Product data sheet 100 V, 1 A PBSS9110T PNP low VCEsat (BISS) transistor FEATURES QUICK REFERENCE DATA SOT23 package SYMBOL PARAMETER MAX. UNIT Low collector-emitter saturatio... See More ⇒

 6.2. Size:184K  nxp

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PBSS9110Z

PBSS9110X 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 02 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. NPN complement PBSS8110X. 1.2 Features SOT89 package Low collector-emitter saturation voltage VCEsat High collector current ca... See More ⇒

 6.3. Size:166K  nxp

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PBSS9110Z

PBSS9110D 100 V, 1 A PNP low VCEsat (BISS) transistor Rev. 03 22 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement PBSS8110D. 1.2 Features Low collector-emitter saturation voltage VCEsat High collector cu... See More ⇒

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Detailed specifications: PBSS8110X, PBSS8110Y, PBSS8110Z, PBSS8510PA, PBSS9110D, PBSS9110T, PBSS9110X, PBSS9110Y, BD136, PBSS9410PA, PDTA113EE, PDTA113EM, PDTA113ET, PDTA113EU, PDTA113ZE, PDTA113ZM, PDTA113ZT

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