PDTA114EE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3

DISCRETE SEMICONDUCTORS DATA SHEETPDTA114E seriesPNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA114E seriesR1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3

PDTA143/114/124/144EQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 18 December 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType nu