PDTA114ET . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA114ET
Código: *03_p03_t03_W03
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3 pF
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT23
Búsqueda de reemplazo de transistor bipolar PDTA114ET
PDTA114ET Datasheet (PDF)
pdta114et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3
pdta114et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA114ETPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 15Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design handbook, 4 columns3
pdta114ee pdta114em pdta114et pdta114eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pdta114eu 6.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1
pdta114es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o
pdta114ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit
pdta114e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTA114E seriesPNP resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2004 Aug 02Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA114E seriesR1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdta114eu 6.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTA114EUPNP resistor-equipped transistor1999 Apr 13Product specificationSupersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EUFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3handbook, 4 columns Simplification of circuit design
pdta114eef 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTA114EEFPNP resistor-equipped transistor1999 May 21Preliminary specificationSupersedes data of 1998 Nov 11Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFFEATURES PINNING Power dissipation comparable to SOT23PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each)1
pdta114es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTA114ESPNP resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 02File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114ESFEATURES Built-in bias resistorsR1 and R2 (typ. 10 k each) Simplification o
pdta114ek 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D114PDTA114EKPNP resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 Jul 04File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplific
pdta114ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA114EEPNP resistor-equipped transistorPreliminary specification 1998 Jul 23Supersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Preliminary specificationPNP resistor-equipped transistor PDTA114EEFEATURES Built-in bias resistors R1 and R2(typ. 10 k each) Simplification of circuit
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