PDTA123JT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTA123JT  📄📄 

Código: *23_p23_t23_W23

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 3 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT23

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PDTA123JT datasheet

 ..1. Size:56K  motorola
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PDTA123JT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number

 ..2. Size:56K  philips
 pdta123jt 1.pdf pdf_icon

PDTA123JT

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number

 ..3. Size:1050K  nxp
 pdta123je pdta123jm pdta123jt pdta123ju.pdf pdf_icon

PDTA123JT

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:54K  motorola
 pdta123jef 1.pdf pdf_icon

PDTA123JT

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

MOSTRAR MÁS

Otros transistores... PDTA115TT, PDTA115TU, PDTA123EE, PDTA123EM, PDTA123ET, PDTA123EU, PDTA123JE, PDTA123JM, TIP31C, PDTA123JU, PDTA123TE, PDTA123TM, PDTA123TT, PDTA123TU, PDTA123YE, PDTA123YM, PDTA123YT