PDTA123JT - описание и поиск аналогов

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123JT PNP resistor-equipped transistor 1999 May 27 Product specification Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JT FEATURES Built-in bias resistors (typ 2.2 k and 47 k respectively) 3 handbook, 4 columns Simplification of circuit design 3 Reduces number

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

DISCRETE SEMICONDUCTORS DATA SHEET PDTA123J series PNP resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2004 Aug 02 Supersedes data of 2003 Apr 14 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA123J series R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d

PDTA143X/123J/143Z/114YQA series 50 V, 100 mA PNP resistor-equipped transistors Rev. 1 30 October 2015 Product data sheet 1. Product profile 1.1 General description 100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Table 1. Product overview Type