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PDTA124ET . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTA124ET
   Código: *05_p05_t05_W05
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de transistor bipolar PDTA124ET

 

PDTA124ET Datasheet (PDF)

 ..1. Size:56K  motorola
 pdta124et 5.pdf pdf_icon

PDTA124ET

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PDTA124ET PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3

 ..2. Size:56K  philips
 pdta124et 5.pdf pdf_icon

PDTA124ET

DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 PDTA124ET PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3

 6.1. Size:58K  motorola
 pdta124es 2.pdf pdf_icon

PDTA124ET

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA124ES PNP resistor-equipped transistor 1998 May 20 Product specification Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124ES FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification o

 6.2. Size:57K  motorola
 pdta124ee 2.pdf pdf_icon

PDTA124ET

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA124EE PNP resistor-equipped transistor Product specification 1998 Jul 23 Supersedes data of 1997 Jul 04 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EE FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification of circuit design

MOSTRAR MÁS

Otros transistores... PDTA123TT , PDTA123TU , PDTA123YE , PDTA123YM , PDTA123YT , PDTA123YU , PDTA124EE , PDTA124EM , 2SC1815 , PDTA124EU , PDTA124TE , PDTA124TM , PDTA124TT , PDTA124TU , PDTA124XE , PDTA124XM , PDTA124XT .

History: TP1711

 

 
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