PDTA143XM
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTA143XM
Código: DN
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 4.7 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.47
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.25
W
Tensión colector-base (Vcb): 50
V
Tensión colector-emisor (Vce): 50
V
Tensión emisor-base (Veb): 7
V
Corriente del colector DC máxima (Ic): 0.1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 3
pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta:
SOT883
Búsqueda de reemplazo de transistor bipolar PDTA143XM
PDTA143XM
Datasheet (PDF)
6.1. Size:55K motorola
pdta143xe 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 krespectively)handbook, halfpage33 Simplification of circuit designR11 Reduces numbe
6.2. Size:56K motorola
pdta143xt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XTFEATURES Built-in bias resistors R1 and R2(typ.4.7 k and 10 k respectively)3 Simplification of circuit design handbook, 4 columns3 Reduces
6.3. Size:55K philips
pdta143xe 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTA143XEPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XEFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 krespectively)handbook, halfpage33 Simplification of circuit designR11 Reduces numbe
6.4. Size:56K philips
pdta143xt 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTA143XTPNP resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationPNP resistor-equipped transistor PDTA143XTFEATURES Built-in bias resistors R1 and R2(typ.4.7 k and 10 k respectively)3 Simplification of circuit design handbook, 4 columns3 Reduces
6.5. Size:2790K nxp
pdta143xqa pdta123jqa pdta143zqa pdta114yqa.pdf
PDTA143X/123J/143Z/114YQA series50 V, 100 mA PNP resistor-equipped transistorsRev. 1 30 October 2015 Product data sheet1. Product profile1.1 General description100 mA PNP Resistor-Equipped Transistor (RET) family in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.Table 1. Product overviewType
6.6. Size:75K nxp
pdta143x.pdf
PDTA143X seriesPNP resistor-equipped transistors; R1 = 4.7 k, R2 = 10 kRev. 04 16 April 2007 Product data sheet1. Product profile1.1 General descriptionPNP Resistor-Equipped Transistors (RET) family in small plastic packages.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTA143XE SOT416 SC-75 - PDTC143XEPDTA143XK SOT346 SC-59A TO-236 PDT
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