PDTB113ET Todos los transistores

 

PDTB113ET . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTB113ET
   Código: *7U_-7U_p7U_t7U_W7U
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 1 kOhm
   Resistencia Base-Emisor R2 = 1 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 11 pF
   Ganancia de corriente contínua (hfe): 33
   Paquete / Cubierta: SOT23
 

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PDTB113ET Datasheet (PDF)

 6.1. Size:118K  nxp
 pdtb113e.pdf pdf_icon

PDTB113ET

PDTB113E seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 1 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113EK SOT346 SC-59A TO-236 PDTD113EKPDTB113ES[1] SOT54 SC-43A TO-92 PDT

 7.1. Size:118K  nxp
 pdtb113z.pdf pdf_icon

PDTB113ET

PDTB113Z seriesPNP 500 mA, 50 V resistor-equipped transistors;R1 = 1 k, R2 = 10 kRev. 02 16 November 2009 Product data sheet1. Product profile1.1 General description500 mA PNP Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package NPN complementNXP JEITA JEDECPDTB113ZK SOT346 SC-59A TO-236 PDTD113ZKPDTB113ZS[1] SOT54 SC-43A TO-92 PD

 8.1. Size:26K  motorola
 pdtb114et p09 sot23.pdf pdf_icon

PDTB113ET

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

 8.2. Size:49K  motorola
 pdtb114et 4.pdf pdf_icon

PDTB113ET

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTB114ETPNP resistor-equipped transistor1997 Sep 02Objective specificationSupersedes data of February 1995File under Discrete Semiconductors, SC04Philips Semiconductors Objective specificationPNP resistor-equipped transistor PDTB114ETFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplifi

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: MT6L62AE | UN921TJ | DRA3144T | BF840 | DRA9123E | 40409

 

 
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