PDTB113ET Datasheet. Specs and Replacement
Type Designator: PDTB113ET 📄📄
SMD Transistor Code: *7U_-7U_p7U_t7U_W7U
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 1 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 11 pF
Forward Current Transfer Ratio (hFE), MIN: 33
Package: SOT23
PDTB113ET Substitution
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PDTB113ET datasheet
PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113EK SOT346 SC-59A TO-236 PDTD113EK PDTB113ES[1] SOT54 SC-43A TO-92 PDT... See More ⇒
PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113ZK SOT346 SC-59A TO-236 PDTD113ZK PDTB113ZS[1] SOT54 SC-43A TO-92 PD... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒
Detailed specifications: PDTA144VE, PDTA144VM, PDTA144VT, PDTA144VU, PDTA144WE, PDTA144WM, PDTA144WT, PDTA144WU, BC547B, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, PDTC114ET, PDTC114EU
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History: PDTA144VT | PBSS8110Y
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