PDTB113ET Datasheet. Specs and Replacement

Type Designator: PDTB113ET  📄📄 

SMD Transistor Code: *7U_-7U_p7U_t7U_W7U

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 1 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 11 pF

Forward Current Transfer Ratio (hFE), MIN: 33

Noise Figure, dB: -

Package: SOT23

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PDTB113ET datasheet

 6.1. Size:118K  nxp

pdtb113e.pdf pdf_icon

PDTB113ET

PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 1 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113EK SOT346 SC-59A TO-236 PDTD113EK PDTB113ES[1] SOT54 SC-43A TO-92 PDT... See More ⇒

 7.1. Size:118K  nxp

pdtb113z.pdf pdf_icon

PDTB113ET

PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 k , R2 = 10 k Rev. 02 16 November 2009 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package NPN complement NXP JEITA JEDEC PDTB113ZK SOT346 SC-59A TO-236 PDTD113ZK PDTB113ZS[1] SOT54 SC-43A TO-92 PD... See More ⇒

 8.1. Size:26K  motorola

pdtb114et p09 sot23.pdf pdf_icon

PDTB113ET

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

 8.2. Size:49K  motorola

pdtb114et 4.pdf pdf_icon

PDTB113ET

DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTB114ET PNP resistor-equipped transistor 1997 Sep 02 Objective specification Supersedes data of February 1995 File under Discrete Semiconductors, SC04 Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTB114ET FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 Simplifi... See More ⇒

Detailed specifications: PDTA144VE, PDTA144VM, PDTA144VT, PDTA144VU, PDTA144WE, PDTA144WM, PDTA144WT, PDTA144WU, BC547B, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, PDTC114ET, PDTC114EU

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