PDTC114TE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC114TE  📄📄 

Código: 24

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 200

Encapsulados: SOT416

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PDTC114TE datasheet

 ..1. Size:51K  motorola
 pdtc114te 2.pdf pdf_icon

PDTC114TE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114TE NPN resistor-equipped transistor 1998 Aug 03 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design Reduces

 ..2. Size:51K  philips
 pdtc114te 2.pdf pdf_icon

PDTC114TE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114TE NPN resistor-equipped transistor 1998 Aug 03 Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TE FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit design Reduces

 6.1. Size:53K  motorola
 pdtc114ts 2.pdf pdf_icon

PDTC114TE

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC114TS NPN resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TS FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi

 6.2. Size:52K  motorola
 pdtc114tk 2.pdf pdf_icon

PDTC114TE

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC114TK NPN resistor-equipped transistor 1998 May 19 Product specification Supersedes data of 1997 May 28 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114TK FEATURES Built-in bias resistor R1 (typ. 10 k ) Simplification of circuit desi

MOSTRAR MÁS

Otros transistores... PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE, PDTC114EM, PDTC114ET, PDTC114EU, D882P, PDTC114TM, PDTC114TT, PDTC114TU, PDTC114YE, PDTC114YM, PDTC114YT, PDTC114YU, PDTC115EE