PDTC114TT Todos los transistores

 

PDTC114TT . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC114TT
   Código: -12_p12_t12_W12
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 10 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 200
   Paquete / Cubierta: SOT23
 

 Búsqueda de reemplazo de PDTC114TT

   - Selección ⓘ de transistores por parámetros

 

PDTC114TT Datasheet (PDF)

 ..1. Size:51K  motorola
 pdtc114tt 3.pdf pdf_icon

PDTC114TT

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 ..2. Size:51K  philips
 pdtc114tt 3.pdf pdf_icon

PDTC114TT

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC114TTNPN resistor-equipped transistor1999 Apr 16Objective specificationSupersedes data of 1998 May 19Philips Semiconductors Objective specificationNPN resistor-equipped transistor PDTC114TTFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit design3handbook, 4 columns Reduces

 6.1. Size:53K  motorola
 pdtc114ts 2.pdf pdf_icon

PDTC114TT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC114TSNPN resistor-equipped transistor1998 May 18Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TSFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

 6.2. Size:52K  motorola
 pdtc114tk 2.pdf pdf_icon

PDTC114TT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114TKNPN resistor-equipped transistor1998 May 19Product specificationSupersedes data of 1997 May 28File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114TKFEATURES Built-in bias resistor R1 (typ. 10 k) Simplification of circuit desi

MOSTRAR MÁS

Otros transistores... PDTB123TT , PDTB123YT , PDTC114EE , PDTC114EM , PDTC114ET , PDTC114EU , PDTC114TE , PDTC114TM , MPSA42 , PDTC114TU , PDTC114YE , PDTC114YM , PDTC114YT , PDTC114YU , PDTC115EE , PDTC115EM , PDTC115ET .

History: 2SD1740 | KSB1023 | TIS108 | TIP115 | 3DD13005ED | 2SD1993 | TA1767

 

 
Back to Top

 


 
.