PDTC114YE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC114YE  📄📄 

Código: 33

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT416

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PDTC114YE datasheet

 ..1. Size:56K  motorola
pdtc114ye 3.pdf pdf_icon

PDTC114YE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification

 ..2. Size:56K  philips
pdtc114ye 3.pdf pdf_icon

PDTC114YE

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC114YE NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YE FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 k PIN DESCRIPTION respectively) 1 base/input Simplification

 6.1. Size:56K  motorola
pdtc114yt 3.pdf pdf_icon

PDTC114YE

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC114YT NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 19 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YT FEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 k respectively) Simplification of circuit design 3 Re

 6.2. Size:59K  motorola
pdtc114yu 1.pdf pdf_icon

PDTC114YE

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114YU NPN resistor-equipped transistor 1999 Apr 20 Product specification Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114YU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k and 47 k respectively) 3 handbook, 4 columns 3 Simplification of circuit design R1 R

Otros transistores... PDTC114EE, PDTC114EM, PDTC114ET, PDTC114EU, PDTC114TE, PDTC114TM, PDTC114TT, PDTC114TU, A42, PDTC114YM, PDTC114YT, PDTC114YU, PDTC115EE, PDTC115EM, PDTC115ET, PDTC115EU, PDTC115TE