Биполярный транзистор PDTC114YE - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC114YE
Маркировка: 33
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 10 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 0.21
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 100
Корпус транзистора: SOT416
Аналоги (замена) для PDTC114YE
PDTC114YE Datasheet (PDF)
pdtc114ye 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification
pdtc114ye 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114YENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k and 47 kPIN DESCRIPTIONrespectively)1 base/input Simplification
pdtc114yt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R
pdtc114y series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC114Y seriesNPN resistor-equipped transistors; R1 = 10 k, R2 = 47 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Sep 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC114Y seriesR1 = 10 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pdtc114yt 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC114YTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YTFEATURES Built-in bias resistors R1 and R2 (typ. 10 and 47 krespectively) Simplification of circuit design3 Re
pdtc114yu 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC114YUNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114YUFEATURES Built-in bias resistors R1 and R2(typ. 10 k and 47 k respectively)3handbook, 4 columns3 Simplification of circuit designR1 R
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