PDTC115TM Todos los transistores

 

PDTC115TM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC115TM
   Código: G5
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 100 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT883
     - Selección de transistores por parámetros

 

PDTC115TM Datasheet (PDF)

 6.1. Size:70K  philips
 pdtc115tk pdtc115ts.pdf pdf_icon

PDTC115TM

PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD

 6.2. Size:71K  philips
 pdtc115t ser.pdf pdf_icon

PDTC115TM

PDTC115T seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = openRev. 04 17 February 2005 Product data sheet1. Product profile1.1 General descriptionNPN resistor-equipped transistors.Table 1: Product overviewType number Package PNP complementPhilips JEITAPDTC115TE SOT416 SC-75 PDTA115TEPDTC115TK SOT346 SC-59A PDTA115TKPDTC115TM SOT883 SC-101 PDTA115TM[1]PD

 7.1. Size:182K  philips
 pdtc115e series.pdf pdf_icon

PDTC115TM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 7.2. Size:138K  nxp
 pdtc115eef pdtc115ek pdtc115es.pdf pdf_icon

PDTC115TM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC115E seriesNPN resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

MOSTRAR MÁS

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: KSC2316O | BCX18 | KRA769U | MP278 | PDTC124TU | 2SA1795 | 2SC3467

 

 
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