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PDTC123EU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC123EU
   Código: *48_p48_t48_W48
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 2.2 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT323
 

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PDTC123EU Datasheet (PDF)

 6.1. Size:55K  motorola
 pdtc123et 3.pdf pdf_icon

PDTC123EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 6.2. Size:182K  philips
 pdtc123e series.pdf pdf_icon

PDTC123EU

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.3. Size:55K  philips
 pdtc123et 3.pdf pdf_icon

PDTC123EU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 6.4. Size:139K  nxp
 pdtc123eef pdtc123ek pdtc123es.pdf pdf_icon

PDTC123EU

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

MOSTRAR MÁS

Otros transistores... PDTC115EU , PDTC115TE , PDTC115TM , PDTC115TT , PDTC115TU , PDTC123EE , PDTC123EM , PDTC123ET , C5198 , PDTC123JE , PDTC123JM , PDTC123JT , PDTC123JU , PDTC123TE , PDTC123TM , PDTC123TT , PDTC123TU .

 

 
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