PDTC123JM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PDTC123JM  📄📄 

Código: DW_G1

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 2.2 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Capacitancia de salida (Cc): 2.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: SOT883

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PDTC123JM datasheet

 6.1. Size:54K  motorola
 pdtc123jef 1.pdf pdf_icon

PDTC123JM

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

 6.2. Size:55K  motorola
 pdtc123je 3.pdf pdf_icon

PDTC123JM

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3

 6.3. Size:56K  motorola
 pdtc123jt 3.pdf pdf_icon

PDTC123JM

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design

 6.4. Size:54K  philips
 pdtc123jef 1.pdf pdf_icon

PDTC123JM

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red

MOSTRAR MÁS

Otros transistores... PDTC115TM, PDTC115TT, PDTC115TU, PDTC123EE, PDTC123EM, PDTC123ET, PDTC123EU, PDTC123JE, TIP41, PDTC123JT, PDTC123JU, PDTC123TE, PDTC123TM, PDTC123TT, PDTC123TU, PDTC123YE, PDTC123YM