PDTC123JM . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDTC123JM
   Código: DW_G1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT883

Búsqueda de reemplazo de transistor bipolar PDTC123JM

PDTC123JM Datasheet (PDF)

6.1. Size:54K motorola
pdtc123jef 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

6.2. Size:55K motorola
pdtc123je 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

6.3. Size:56K motorola
pdtc123jt 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

6.4. Size:54K philips
pdtc123jef 1.pdf

6.5. Size:55K philips
pdtc123je 3.pdf

6.6. Size:174K philips
pdtc123j series.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123J seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 13Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

6.7. Size:56K philips
pdtc123jt 3.pdf