PDTC123JU Todos los transistores

 

PDTC123JU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PDTC123JU
   Código: *49_p48_t48_W48
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 2.2 kOhm
   Resistencia Base-Emisor R2 = 47 kOhm
   Ratio típica de resistencia R1/R2 = 0.047

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT323
 

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PDTC123JU Datasheet (PDF)

 6.1. Size:54K  motorola
 pdtc123jef 1.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 6.2. Size:55K  motorola
 pdtc123je 3.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 6.3. Size:56K  motorola
 pdtc123jt 3.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 6.4. Size:54K  philips
 pdtc123jef 1.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

MOSTRAR MÁS

Otros transistores... PDTC115TU , PDTC123EE , PDTC123EM , PDTC123ET , PDTC123EU , PDTC123JE , PDTC123JM , PDTC123JT , D882 , PDTC123TE , PDTC123TM , PDTC123TT , PDTC123TU , PDTC123YE , PDTC123YM , PDTC123YT , PDTC123YU .

History: MMUN2130LT1G | 2SC4747 | CHT5401GP | CHDTC363EKGP | 2SD468B | 2SC2961 | TIP3054

 

 
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