PDTC123JU Datasheet. Specs and Replacement

Type Designator: PDTC123JU  📄📄 

SMD Transistor Code: *49_p48_t48_W48

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT323

 PDTC123JU Substitution

- BJT ⓘ Cross-Reference Search

 

PDTC123JU datasheet

 6.1. Size:54K  motorola

pdtc123jef 1.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

 6.2. Size:55K  motorola

pdtc123je 3.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3... See More ⇒

 6.3. Size:56K  motorola

pdtc123jt 3.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design ... See More ⇒

 6.4. Size:54K  philips

pdtc123jef 1.pdf pdf_icon

PDTC123JU

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

Detailed specifications: PDTC115TU, PDTC123EE, PDTC123EM, PDTC123ET, PDTC123EU, PDTC123JE, PDTC123JM, PDTC123JT, BC337, PDTC123TE, PDTC123TM, PDTC123TT, PDTC123TU, PDTC123YE, PDTC123YM, PDTC123YT, PDTC123YU

Keywords - PDTC123JU pdf specs

 PDTC123JU cross reference

 PDTC123JU equivalent finder

 PDTC123JU pdf lookup

 PDTC123JU substitution

 PDTC123JU replacement