PDTC123YE Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PDTC123YE 📄📄
Código: 19
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 2.2 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 0.22
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Capacitancia de salida (Cc): 2 pF
Ganancia de corriente contínua (hFE): 35
Encapsulados: SOT416
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PDTC123YE datasheet
6.1. Size:137K nxp
pdtc123yk pdtc123ys.pdf 
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
6.2. Size:137K nxp
pdtc123y.pdf
PDTC123Y series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 10 k Rev. 04 16 November 2009 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family. Table 1. Product overview Type number Package PNP complement NXP JEITA JEDEC PDTC123YE SOT416 SC-75 - PDTA123YE PDTC123YK SOT346 SC-59A TO-236 PDTA123YK PDTC123YM SOT883
7.1. Size:54K motorola
pdtc123jef 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.2. Size:55K motorola
pdtc123je 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.3. Size:56K motorola
pdtc123jt 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.4. Size:55K motorola
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.5. Size:182K philips
pdtc123e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.6. Size:54K philips
pdtc123jef 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTC123JEF NPN resistor-equipped transistor 1999 May 27 Preliminary specification Philips Semiconductors Preliminary specification NPN resistor-equipped transistor PDTC123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red
7.7. Size:55K philips
pdtc123je 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTC123JE NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 Aug 03 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 k respectively) Simplification of circuit design handbook, halfpage 3 3
7.8. Size:174K philips
pdtc123j series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 47 k Product data sheet 2004 Aug 13 Supersedes data of 2003 Apr 10 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123J series R1 = 2.2 k , R2 = 47 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNIT
7.9. Size:56K philips
pdtc123jt 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor 1999 May 18 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123JT FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) Simplification of circuit design
7.10. Size:55K philips
pdtc123et 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co
7.11. Size:78K philips
pdtc123tk pdtc123ts pdtc123t ser.pdf
PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK
7.12. Size:139K nxp
pdtc123eef pdtc123ek pdtc123es.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
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