PDTC123YE . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123J seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 13Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

PDTC123T seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = openRev. 01 10 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC123TE SOT416 SC-75 - PDTA123TEPDTC123TK

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI