All Transistors. PDTC123YE Datasheet

 

PDTC123YE Datasheet, Equivalent, Cross Reference Search


   Type Designator: PDTC123YE
   SMD Transistor Code: 19
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.22
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: SOT416

 PDTC123YE Transistor Equivalent Substitute - Cross-Reference Search

   

PDTC123YE Datasheet (PDF)

 6.1. Size:137K  nxp
pdtc123yk pdtc123ys.pdf

PDTC123YE
PDTC123YE

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

 6.2. Size:137K  nxp
pdtc123y.pdf

PDTC123YE
PDTC123YE

PDTC123Y seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 10 kRev. 04 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC123YE SOT416 SC-75 - PDTA123YEPDTC123YK SOT346 SC-59A TO-236 PDTA123YKPDTC123YM SOT883

 7.1. Size:54K  motorola
pdtc123jef 1.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.2. Size:55K  motorola
pdtc123je 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.3. Size:56K  motorola
pdtc123jt 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 7.4. Size:55K  motorola
pdtc123et 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 7.5. Size:182K  philips
pdtc123e series.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 7.6. Size:54K  philips
pdtc123jef 1.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 7.7. Size:55K  philips
pdtc123je 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

 7.8. Size:174K  philips
pdtc123j series.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123J seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2004 Aug 13Supersedes data of 2003 Apr 10NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123J seriesR1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

 7.9. Size:56K  philips
pdtc123jt 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 7.10. Size:55K  philips
pdtc123et 3.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123ETNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co

 7.11. Size:78K  philips
pdtc123tk pdtc123ts pdtc123t ser.pdf

PDTC123YE
PDTC123YE

PDTC123T seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = openRev. 01 10 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC123TE SOT416 SC-75 - PDTA123TEPDTC123TK

 7.12. Size:139K  nxp
pdtc123eef pdtc123ek pdtc123es.pdf

PDTC123YE
PDTC123YE

DISCRETE SEMICONDUCTORS DATA SHEETPDTC123E seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 06Supersedes data of 2004 Mar 18NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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