PDTC124EU . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PDTC124EU
   Código: p06_t06_t17_W06
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 22 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Capacitancia de salida (Cc): 2.5 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT323

Búsqueda de reemplazo de transistor bipolar PDTC124EU

PDTC124EU Datasheet (PDF)

..1. Size:58K motorola
pdtc124eu 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

..2. Size:58K philips
pdtc124eu 3.pdf

6.1. Size:56K motorola
pdtc124et 5.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

6.2. Size:58K motorola
pdtc124es 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

6.3. Size:57K motorola
pdtc124ek 3.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

6.4. Size:57K motorola
pdtc124ee 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

6.5. Size:56K philips
pdtc124et 5.pdf

6.6. Size:58K philips
pdtc124es 2.pdf

6.7. Size:57K philips
pdtc124ek 3.pdf

6.8. Size:57K philips
pdtc124ee 2.pdf

6.9. Size:174K philips
pdtc124e series.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124E seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050