Биполярный транзистор PDTC124EU - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PDTC124EU
Маркировка: p06_t06_t17_W06
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 22 kOhm
Встроенный резистор цепи смещения R2 = 22 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 2.5 pf
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SOT323
Аналоги (замена) для PDTC124EU
PDTC124EU Datasheet (PDF)
pdtc124eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design
pdtc124eu 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design
pdtc124et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3
pdtc124es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdtc124ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio
pdtc124ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
pdtc124et 5.pdf
DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3
pdtc124es 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o
pdtc124ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio
pdtc124ee 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design
pdtc124e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPDTC124E seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050